Communications

Communications

Communications

GaN-on-SiC has been a game-changer in the RADAR market, particularly in high-power radar systems. The superior thermal performance of GaN-on-SiC allows for higher power densities, leading to more compact and efficient radar systems.

​​​​​​​Furthermore, the wide bandwidth of GaN-on-SiC devices enables multi-function radar capabilities, which are increasingly important in today’s dynamic and complex operational scenarios.

​​​​​​​

Milcom

In the milcom market of Aerospace & Defense, there’s a revival in product demand, particularly for weapons and next-generation capabilities. This demand is expected to continue into 2024. Alongside this, A&D companies are embracing digitalization and adopting emerging, advanced technologies to address challenges such as supply chain issues, longer lead times, and talent shortage. Moreover, global defense spending has been on a clear upswing for almost a decade and is at a historic high now. The defense industrial base across the U.S. & Europe is gearing up to ramp-up production rates over the near term.

As for RF GaN-on-SiC technology, it provides power densities up to 10× higher than silicon-based devices. This could lead to power systems with higher power densities and lower cooling requirements. GaN transistors dissipate less power and offer higher thermal conductivity compared to silicon devices. They also have a smaller form factor, which is beneficial for high-efficiency applications. The use of GaN components is growing rapidly in radar system designs. GaN-on-SiC has been the choice of telecom OEMs such as Huawei, Nokia, Samsung for 5G massive MIMO infrastructures. Furthermore, GaN-on-SiC is still the primary platform supplying demanding applications in defense radar, electronic warfare, and defense communication applications.

These features make RF GaN-on-SiC technology a promising solution for the evolving needs of the Aerospace & Defense industry. However, the actual impact will depend on how effectively this technology is implemented and integrated into existing systems.

GaN MMIC / PA (Power Amplifier)
Frequency Min [GHz] (0)
Frequency Max [GHz] (0)
Output Power (Sat.) [W] (0)
Small Signal Gain [dB] (0)
Package Type (0)
Parametric Filters
GaN MMIC / LNA (Low Noise Amplifier)
Frequency Min [GHz] (0)
Frequency Max [GHz] (0)
Small Signal Gain [dB] (0)
NF [dB] (0)
Package Type (0)
Parametric Filters
GaN MMIC / FEM (Front End Module)
Frequency Min [GHz] (0)
Frequency Max [GHz] (0)
Tx Gain [dB] (0)
Tx Output Power (Sat.) [dBm] (0)
Rx Gain [dB] (0)
Rx NF [dB] (0)
Package Type (0)
Parametric Filters
GaN Discrete / Bare Die
Frequency Min [GHz] (0)
Frequency Max [GHz] (0)
Output Power (Sat.) [W] (0)
Small Signal Gain [dB] (0)
Package Type (0)
Parametric Filters
GaN Discrete / Unmatched Transistor
Frequency Min [GHz] (0)
Frequency Max [GHz] (0)
Output Power (Sat.) [W] (0)
Small Signal Gain [dB] (0)
Package Type (0)
Parametric Filters
GaN Discrete / Matched Transistor
Frequency Min [GHz] (0)
Frequency Max [GHz] (0)
Output Power (Sat.) [W] (0)
Small Signal Gain [dB] (0)
Package Type (0)
Parametric Filters
SNS Share 공유하기